Severe gain suppression due to dynamic carrier heating in quantum well lasers

被引:18
作者
Grupen, M [1 ]
Hess, K [1 ]
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
关键词
D O I
10.1063/1.118229
中图分类号
O59 [应用物理学];
学科分类号
摘要
Comparing the results of the quantum well laser diode simulator Minilase-II with modulation responses measured at the University of California, Santa Barbara, we show that electron and polar optical phonons are rapidly heated above equilibrium in conventional injection lasers. This heating essentially follows and counteracts the modulation of the carrier density, leading to degradation of the dynamic laser response even for relatively small changes in carrier temperature. With this in mind, we speculate about the use of tunneling injection to avoid the hot quantum carrier effects intrinsic to conventional injection lasers. (C) 1997 American Institute of Physics.
引用
收藏
页码:808 / 810
页数:3
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