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Emission-Tunable CuInS2/ZnS Quantum Dots: Structure, Optical Properties, and Application in White Light-Emitting Diodes with High Color Rendering Index
被引:248
作者:
Chuang, Po-Hsiang
[1
]
Lin, Chun Che
[1
]
Liu, Ru-Shi
[1
,2
,3
]
机构:
[1] Natl Taiwan Univ, Dept Chem, Taipei 106, Taiwan
[2] Natl Taipei Univ Technol, Dept Mech Engn, Taipei 106, Taiwan
[3] Natl Taipei Univ Technol, Grad Inst Mfg Technol, Taipei 106, Taiwan
关键词:
CuIns(2);
quantum dots;
donor-acceptor pair;
temperature-dependent photoluminescence;
light-emitting diodes;
SEMICONDUCTOR NANOCRYSTALS;
PHOTOLUMINESCENCE;
LUMINESCENT;
RED;
NONINJECTION;
D O I:
10.1021/am503889z
中图分类号:
TB3 [工程材料学];
学科分类号:
082905 [生物质能源与材料];
摘要:
Synthesis and application of CuInS2/ZnS core/shell quantum dots (QDs) with varying [Cu]/[In] ratios were conducted using a stepwise solvothermal route. CuInS2(CIS) core QDs with varying [Cu]/[In] ratios exhibited deep-red emissions result from donor-acceptor pair recombination. The absorption and emission band gap of the CuInS2 QDs increased with the decrease in Cu content. The emission bands of the CuInS2/ZnS were tuned from 550 to 616 nm by controlling the [Cu]/[In] ratio after coating ZnS layer. The CIS QDs model was developed to elucidate the synthesized crystal structure and photoluminescence of the QDs with various [Cu]/[In] ratios. Temperature-dependent photoluminescence spectra of the CIS2/ZnS QDs were also investigated. The temperature dependency of the photoluminescence energy and intensity for various CIS/ZnS QDs were studied from 25 to 200 degrees C. Efficient white light-emitting diodes with high color rendering index values (Ra = 90) were fabricated using CIS/ZnS QDs as color converters in combination with green light-emitting Ba2SiO4:Eu2+ phosphors and blue light-emitting diodes.
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页码:15379 / 15387
页数:9
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