Emission-Tunable CuInS2/ZnS Quantum Dots: Structure, Optical Properties, and Application in White Light-Emitting Diodes with High Color Rendering Index

被引:248
作者
Chuang, Po-Hsiang [1 ]
Lin, Chun Che [1 ]
Liu, Ru-Shi [1 ,2 ,3 ]
机构
[1] Natl Taiwan Univ, Dept Chem, Taipei 106, Taiwan
[2] Natl Taipei Univ Technol, Dept Mech Engn, Taipei 106, Taiwan
[3] Natl Taipei Univ Technol, Grad Inst Mfg Technol, Taipei 106, Taiwan
关键词
CuIns(2); quantum dots; donor-acceptor pair; temperature-dependent photoluminescence; light-emitting diodes; SEMICONDUCTOR NANOCRYSTALS; PHOTOLUMINESCENCE; LUMINESCENT; RED; NONINJECTION;
D O I
10.1021/am503889z
中图分类号
TB3 [工程材料学];
学科分类号
082905 [生物质能源与材料];
摘要
Synthesis and application of CuInS2/ZnS core/shell quantum dots (QDs) with varying [Cu]/[In] ratios were conducted using a stepwise solvothermal route. CuInS2(CIS) core QDs with varying [Cu]/[In] ratios exhibited deep-red emissions result from donor-acceptor pair recombination. The absorption and emission band gap of the CuInS2 QDs increased with the decrease in Cu content. The emission bands of the CuInS2/ZnS were tuned from 550 to 616 nm by controlling the [Cu]/[In] ratio after coating ZnS layer. The CIS QDs model was developed to elucidate the synthesized crystal structure and photoluminescence of the QDs with various [Cu]/[In] ratios. Temperature-dependent photoluminescence spectra of the CIS2/ZnS QDs were also investigated. The temperature dependency of the photoluminescence energy and intensity for various CIS/ZnS QDs were studied from 25 to 200 degrees C. Efficient white light-emitting diodes with high color rendering index values (Ra = 90) were fabricated using CIS/ZnS QDs as color converters in combination with green light-emitting Ba2SiO4:Eu2+ phosphors and blue light-emitting diodes.
引用
收藏
页码:15379 / 15387
页数:9
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