Microcrystalline GaN film grown on Si(100) and its application to MSM photodiode

被引：12

作者：

Hassan, Z ^{[1
]}

Lee, YC

Yam, FK

Abdullah, MJ

Ibrahim, K

Kordesch, ME

机构：

[1] Univ Sains Malaysia, Sch Phys, George Town 11800, Malaysia

[2] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2004年 / 84卷 / 2-3期

关键词：

nitride semiconductors; X-ray diffraction AFM; electronic characterization;

D O I：

10.1016/j.matchemphys.2003.11.036

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The properties and application of gallium nitride (GaN) films grown on silicon at a low temperature (873 K) by electron cyclotron resonance (ECR) plasma-assisted metalorganic chemical vapor deposition (MOCVD) were investigated. Structural analysis revealed microcrystalline structure (muc-GaN) with crystallite size of 167 nm for these smooth and transparent films. Ni/muc-GaN metal-semiconductor-metal (MSM) photodiode have been fabricated and analyzed by means of electrical characterization, using current-voltage (I-V) and capacitance-voltage (C-V) measurements to evaluate the Schottky contact parameters for the study of current transport mechanism of the MSM photodiode. The barrier height Ob determined from the C-V method is 0.734 eV. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：369 / 374

页数：6

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