Development of ultrahigh vacuum atomic force microscopy with frequency modulation detection and its application to electrostatic force measurement

被引:30
作者
Uchihashi, T
Ohta, M
Sugawara, Y
Yanase, Y
Sigematsu, T
Suzuki, M
Morita, S
机构
[1] OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA 565, JAPAN
[2] SUMITOMO SITIX CO, SILICON R&D CTR, KOHOKU, SAGA 84905, JAPAN
[3] SUMITOMO SITIX CO, SILICON ENGN CONTROL CTR, KOHOKU, SAGA 84905, JAPAN
[4] NTT ADV TECHNOL CO, ATSUGI, KANAGAWA 24301, JAPAN
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 04期
关键词
D O I
10.1116/1.589396
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We succeeded in high resolution force measurements by using a noncontact ultrahigh vacuum-atomic force microscope (UHV-AFM) with frequency modulation (FM) detection. We clearly observed adatoms and corner holes on the Si(111)7 x 7 reconstructed surface. Then we applied the noncontact UHV-AFM with FM detection to the high resolution measurement of the electrostatic force. We prevented deterioration of the spatial resolution of the topography by isolating the electrostatic interaction from van der Waals interaction. By simultaneous measurements of the topography and electrostatic force on a silicon oxide, a spatial resolution similar to 15 Angstrom of the electrostatic force was achieved. (C) 1997 American Vacuum Society. [S0734-211X(97)10204-9].
引用
收藏
页码:1543 / 1546
页数:4
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