Synthesis, photoluminescence and dielectric properties of O-deficient SnO2 nanowires

被引：59

作者：

Li, P. G. ^{[1
]}

Guo, X. ^{[1
]}

Wang, X. F. ^{[2
]}

Tang, W. H. ^{[1
]}

机构：

[1] Zhejiang Sci Tech Univ, Dept Phys, Ctr Optoelect Mat & Devices, Hangzhou 310018, Peoples R China

[2] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 479卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

Semiconductors; Nanostructured materials; Gas-solid reactions; Dielectric response; OPTICAL-PROPERTIES; GAS SENSOR; NANOBELTS; SENSITIVITY; TRANSPORT; MECHANISM; GROWTH;

D O I：

10.1016/j.jallcom.2009.01.054

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High-quality rutile SnO2 nanowires were fabricated by a vapor-phase transport and condensation method assisted by carbothermal reduction. The composition and structure were investigated in detail. It is found that many oxygen vacancies exist in the single-crystalline rutile SnO2 nanowires and can further influence the photoluminescence (PL) and dielectric property of the nanowires. The PL spectrum only exhibits a wide yellow emission centered at 570 nm and usual near band edge emission is not observed, which is ascribed to a large amount of ionized oxygen vacancies. The dielectric measurements indicate that the dielectric response of the SnO2 nanowires is significantly enhanced in the low-frequency range. It is thought both the rotation direction polarization (RDP) and the space charge polarization (SCP) process induced by O vacancies and nanosize effects are the main reasons for the enhancement of relative dielectric constant (epsilon(r)) of these SnO2 nanowires. (c) 2009 Elsevier B.V. All rights reserved.

引用

页码：74 / 77

页数：4

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