Recent problems in electromigration testing

被引:5
作者
Baerg, B
机构
来源
1997 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 35TH ANNUAL | 1997年
关键词
D O I
10.1109/RELPHY.1997.584262
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electromigration testing requires specialized structures for interconnections which use Al(Cu) shunted by refractory layers and terminated with tungsten-filled vias or contacts. Phenomena which may need to be taken into account include temperature gradients, reservoirs, via delamination and extrusions. Six examples of test structures which gave unanticipated results as a consequence of these behaviors are discussed.
引用
收藏
页码:211 / 215
页数:5
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