Electronic structure of carbon-free silicon oxynitride films grown using an organic precursor hexamethyl-disilazane

被引：12

作者：

Chainani, A ^{[1
]}

Nema, SK ^{[1
]}

Kikani, P ^{[1
]}

John, PI ^{[1
]}

机构：

[1] Inst Plasma Res, Gandhinagar 382428, Gujarat, India

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2002年 / 35卷 / 11期

关键词：

D O I：

10.1088/0022-3727/35/11/103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon oxynitride films are grown by plasma-enhanced chemical vapour deposition on single-crystal Si(100) and textured Si solar cells, using a safe organic precursor, hexamethyl-disilazane. Using the Lucovsky-Phillips criterion of bond coordination constraints, we grow high-quality thin (similar to20 Angstrom) and thick (up to 2700 Angstrom) films which are carbon free (< 1.0%) as characterized by x-ray photoemission spectroscopy (XPS) and Auger electron spectroscopy depth profiles. Core-level and valence band XPS is used to conclusively identify oxynitride bonding and band gap reduction in SiOxNy.. For lambda/4 'blue' anti-reflection coating on the solar cells with uniform thickness (870 +/- 15 Angstrom) and composition (SiO1.6+/-0.1 N0.3+/-0.05), an efficiency (AM 1) increase of 1% is obtained.

引用

页码：L44 / L47

页数：4

共 26 条

[1] USE OF MULTILAYER TECHNIQUES FOR XPS IDENTIFICATION OF VARIOUS NITROGEN ENVIRONMENTS IN THE SI/NH3 SYSTEM [J].