Anharmonic effects in the phonons of III-V semiconductors: first principles calculations

被引：73

作者：

Debernardi, A ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

SOLID STATE COMMUNICATIONS | 1999年 / 113卷 / 01期

关键词：

semiconductors; anharmonicity; phonons; inelastic light scattering;

D O I：

10.1016/S0038-1098(99)00374-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present an ab initio calculation of the real part of the phonon self energy for longitudinal and transverse optical Raman phonons in GaAs, AlAs, GaP and InP. The calculated temperature dependences of transverse and longitudinal modes at the Gamma-point are in good agreement with available experimental data. This calculation permits us to analyze the different contributions to the real part of the phonon self-energy. In particular we are able to reproduce the observed asymmetry of the Raman line of the transverse optical mode in GaP. Furthermore, we explain why the frequency of this mode changes less with temperature than that of the transverse mode in the other materials investigated. The pressure dependence of the real and the imaginary parts of the phonon self-energy are also discussed. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：1 / 10

页数：10

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