Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors

被引：32

作者：

Chiou, YZ ^{[1
]}

Su, YK

Chang, SJ

Chen, JF

Chang, CS

Liu, SH

Lin, YC

Chen, CH

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] S Epitaxy Corp, Hsinchu 744, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 6A期

关键词：

GaN; TiN; BST; UV; photodetector;

D O I：

10.1143/JJAP.41.3643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN-based ultraviolet (UV) photodetectors were fabricated with transparent TiN electrodes. It was found that the transmittance was higher than 80% for a 50-nm-thick TiN layer. It was also found that we can significantly reduce the dark current of the photodetectors by inserting a thin Ba0.25Sr0.75TiO3 (BST) interlayer between the TiN electrode and the n-Ga-N. With a 3-nm-thick BST interlayer, we can realize a TiN/BST/GaN photodetector with a photocurrent-to-dark current contrast as high as 2.5 x 10(4).

引用

页码：3643 / 3645

页数：3

共 10 条

[1] GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts [J].

Chen, CH ;

Chang, SJ ;

Su, YK ;

Chi, GC ;

Chi, JY ;

Chang, CA ;

Sheu, JK ;

Chen, JF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (08) :848-850

[2] Schottky barrier detectors on GaN for visible-blind ultraviolet detection [J].

Chen, Q ;

Yang, JW ;

Osinsky, A ;

Gangopadhyay, S ;

Lim, B ;

Anwar, MZ ;

Khan, MA ;

Kuksenkov, D ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2277-2279

[3] Characterization of GaN using thermally stimulated current and photocurrent spectroscopies and its application to UV detectors [J].

Huang, ZC ;

Chen, JC ;

Wickenden, D .

JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) :362-366

[4] HIGH-PERFORMANCE BACK-ILLUMINATED INGAAS INALAS MSM PHOTODETECTOR WITH A RECORD RESPONSIVITY OF 0.96 A/W [J].

KIM, JH ;

GRIEM, HT ;

FRIEDMAN, RA ;

CHAN, EY ;

RAY, S .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (11) :1241-1244

[5] High-performance GaN p-n junction photodetectors for solar ultraviolet applications [J].

Monroy, E ;

Munoz, E ;

Sanchez, FJ ;

Calle, F ;

Calleja, E ;

Beaumont, B ;

Gibart, P ;

Munoz, JA ;

Cusso, F .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (09) :1042-1046

[6] High-quality visible-blind AlGaN p-i-n photodiodes [J].

Monroy, E ;

Hamilton, M ;

Walker, D ;

Kung, P ;

Sánchez, FJ ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1171-1173

[7] Low noise p-pi-n GaN ultraviolet photodetectors [J].

Osinsky, A ;

Gangopadhyay, S ;

Gaska, R ;

Williams, B ;

Khan, MA ;

Kuksenkov, D ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1997, 71 (16) :2334-2336

[8]

PANKOVE JI, 1990, MATER RES SOC SYMP P, V162, P515

[9] High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN [J].

Parish, G ;

Keller, S ;

Kozodoy, P ;

Ibbetson, JP ;

Marchand, H ;

Fini, PT ;

Fleischer, SB ;

DenBaars, SP ;

Mishra, UK ;

Tarsa, EJ .

APPLIED PHYSICS LETTERS, 1999, 75 (02) :247-249

[10] GaN and InGaN metal-semiconductor-metal photodetectors with different Schottky contact metals [J].

Su, YK ;

Chiou, YZ ;

Juang, FS ;

Chang, SJ ;

Sheu, JK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (4B) :2996-2999

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