The production and annealing stages of the self-interstitial (R2) defect in diamond

被引：21

作者：

Twitchen, DJ

Hunt, DC

Wade, C

Newton, ME

Baker, JM

Anthony, TR

Banholzer, WF

机构：

[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England

[2] Ge Co, Corp Res & Dev, Schenectady, NY USA

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷

关键词：

self-interstitial; annealing; irradiation damage;

D O I：

10.1016/S0921-4526(99)00594-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the production rate of the neutral (0 0 1)-split self-interstitial (measured via the electron paramagnetic resonance (EPR) concentration of the R2 defect) in type IIa diamond irradiated at a controlled and measured sample temperature in the interval 110-350 K with 2 MeV electrons and a beam flux of 7.5 x 10(13) electrons cm(-2) s(-1). On annealing at similar to 700 K, we find that the neutral (0 0 1)-split self-interstitial (R2) defect is mobile and anneals out with an associated energy of 1.6(2) eV and some loss of neutral vacancies. A significantly reduced production rate of R2 in the temperature interval 110-350 K is suggestive of a radiation enhanced annealing process. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：644 / 646

页数：3

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