Assessing the reliability and degradation of photovoltaic module performance parameters

被引:242
作者
Meyer, EL [1 ]
van Dyk, EE
机构
[1] Univ Ft Hare, Dept Phys, ZA-5700 Alice, South Africa
[2] Univ Port Elizabeth, ZA-6000 Port Elizabeth, South Africa
基金
新加坡国家研究基金会;
关键词
assessment procedure; degradation analysis; degradation and failure modes; improving reliability; performance parameters; photovoltaic module;
D O I
10.1109/TR.2004.824831
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Photovoltaic (PV) modules are renowned for their reliability. However, some modules degrade or even fail when operating outdoors for extended periods. To reduce the degradation, and the number of failures, extensive research is needed on the performance of PV modules. The aim of this study was to establish a photovoltaic degradation and failure assessment procedure. This procedure should assess all parameters of PV modules to completely analyze any observed degradation or failure. In this paper some degradation modes of PV modules are discussed and a procedure used to assess these degradation modes is then presented. Results obtained by subjecting Copper Indium Diselenide (CIS), single and triple junction amorphous silicon (a-Si and a-SiGe), Edge-defined Film-fed Growth (EFG) silicon and mono-crystalline silicon (mono-Si) modules to the assessment procedure are presented and discussed. Results obtained indicate that the thin-film modules degrade by up to 50% in performance after an initial outdoor exposure of 130 kWh/m(2). Visual inspection revealed that both crystalline modules had cracked cells. The mismatch due to the cracked cell in the EFG-Si module, however, was limited by the interconnect busbars. This paper accentuates the importance of characterizing all module performance parameters in order to analyze observed degradation and failure modes.
引用
收藏
页码:83 / 92
页数:10
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