Repetition-frequency tuning of monolithic passively mode-locked semiconductor lasers with integrated extended cavities

被引：50

作者：

Arahira, S

Ogawa, Y

机构：

[1] Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd., Hachioji

[2] Waseda University, Tokyo

[3] R. and D. Laboratories, Oki Electric Co., Ltd., Tokyo

[4] Tohoku University, Sendai

[5] Research Laboratory, Oki Electric Co., Ltd., Tokyo

[6] Japan Society of Applied Physics, Inst. Electronics, Info. Commun. E.

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1997年 / 33卷 / 02期

关键词：

detuning time; mode-locking; passive mode-locking; repetition-frequency tuning;

D O I：

10.1109/3.552266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Repetition-frequency tuning characteristics of passively mode-locked laser diodes (LD's) were investigated in detail. Anomalous tuning characteristics were observed when the bias conditions of the LD's were changed. Theoretical analysis using conventional self-consistent mode-locking theory showed that the anomaly originated from the change of the detuning from the cavity's round-trip frequency due to gain/absorption saturation effects in the passively mode-locked lasers. A wide tuning range of 280 MHz (1.6% of the repetition frequency) was obtained by changing the bias conditions of the extended cavity.

引用

收藏

页码：255 / 264

页数：10

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