Czochralski growth of Si- and Ge-rich SiGe single crystals

被引：116

作者：

Abrosimov, NV ^{[1
]}

Rossolenko, SN ^{[1
]}

Thieme, W ^{[1
]}

Gerhardt, A ^{[1
]}

Schroder, W ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,RUSSIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 174卷 / 1-4期

关键词：

SiGe; Czochralski technique; automated control; weight technique;

D O I：

10.1016/S0022-0248(96)01102-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Si1-xGex single crystals (0 < x < 0.15) with diameter up to 2 in were grown by conventional Czochralski technique. The method for the growth of Ge(1-x)Six crystals using continuous feeding the melt with a number of Si rods was developed and the Ge1-xSix crystals (0 < x < 0.3) were grown. The growth process both Si1-xGex and Ge1-xSix crystals was carried out using the automated control system based on the crystal weighing. The peculiarities of weight control at the stage of conical part formation are considered.

引用

页码：182 / 186

页数：5

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