Study of resolution limits due to intrinsic bias in chemically amplified photoresists

被引：76

作者：

Postnikov, SV ^{[1
]}

Stewart, MD

Tran, HV

Nierode, MA

Medeiros, DR

Cao, T

Byers, J

Webber, SE

Wilson, CG

机构：

[1] Univ Texas, Dept Chem, Austin, TX 78712 USA

[2] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA

[3] Int SEMATECH, Austin, TX 78741 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期

关键词：

D O I：

10.1116/1.591007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents experimental results that suggest that classical Fickian diffusion cannot account for any significant fraction of the critical dimension bias observed in chemically amplified photoresists. A transport mechanism based on reaction front propagation is proposed as a possible explanation for the experimental observations. (C) 1999 American Vacuum Society. [S0734-211X(99)18206-4].

引用

页码：3335 / 3338

页数：4

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