Image force effects at contacts in organic light-emitting diodes

被引:35
作者
Tutis, E [1 ]
Bussac, MN
Zuppiroli, L
机构
[1] Ecole Polytech Fed Lausanne, Dept Phys, Lab Phys Solides Semicristallins, CH-1015 Lausanne, Switzerland
[2] Ecole Polytech, Ctr Phys Theor, F-91198 Palaiseau, France
关键词
D O I
10.1063/1.125487
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of an image force on the barrier for the injection of the carrier from the electrode into the organic layer is shown to be essential for proper understanding of the metal/organic contact and, in particular, of recent results of internal photoemission experiments for metal/Alq(3) interfaces. While the calculation presented does not depend on the details of the carrier transport in the organic layer, the resulting value of the injection barrier is expected to determine the conduction regime of the device. (C) 1999 American Institute of Physics. [S0003-6951(99)02350-5].
引用
收藏
页码:3880 / 3882
页数:3
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