Complete three-dimensional band gap in macroporous silicon photonic crystals

被引:13
作者
Leonard, SW [1 ]
机构
[1] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada
关键词
D O I
10.1063/1.1513183
中图分类号
O59 [应用物理学];
学科分类号
摘要
The prospect of obtaining a complete three-dimensional band gap in macroporous silicon photonic crystals is investigated theoretically. Band structure calculations indicate that a modified form of the simple cubic lattice of air spheres in silicon exhibits a complete band gap, with a bandwidth of up to 4%. It is further shown that this quasispherical crystal may be fabricated using standard etching procedures. These results provide a practical route to obtaining large-scale, high-quality, silicon photonic crystals with a complete band gap. (C) 2002 American Institute of Physics.
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页码:2917 / 2919
页数:3
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