20Gbit/s regenerative receiver IC using InP/InGaAs double-heterostructure bipolar transistors

被引：2

作者：

Sano, E

Kurishima, K

Yamahata, S

机构：

[1] NTT System Electronics Laboratories, Atsugi 243-01

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 02期

关键词：

optical receivers; integrated circuits; gallium indium arsenide; indium phosphide; heterojunction bipolar transistors; wavelength division multiplexing;

D O I：

10.1049/el:19970101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A regenerative receiver IC, constructed with a preamplifier. postamplifier automatic offset controller, PLL-based timing recovery circuit, and D-type flipflop, has been successfully fabricated. 20 Gbit/s error-free operation for an input dynamic range of 13 dB was achieved with a power dissipation of 0.6 W.

引用

页码：159 / 160

页数：2

共 6 条

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