Quantum dots induced by strain from buried and surface stressors

被引:41
作者
Davies, JH [1 ]
机构
[1] Univ Calif Santa Barbara, Ctr Quantized Elect Struct, Santa Barbara, CA 93106 USA
[2] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland
关键词
D O I
10.1063/1.125563
中图分类号
O59 [应用物理学];
学科分类号
摘要
Quantum dots can be induced in a quantum well by strain from a buried, self-assembled dot or from a stressor on the surface. The elastic fields are shown to be significantly different in their ability to trap carriers. There is no dilation around a buried dot, which therefore has no effect on electrons, and the axial strain repels both holes and excitons. A stressor on the surface, in contrast, produces dilation that can confine all carriers. In both cases, the piezoelectric potential may trap electrons and holes separately in space, storing long-lived spatially indirect excitons. (C) 1999 American Institute of Physics. [S0003-6951(99)03352-5].
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页码:4142 / 4144
页数:3
相关论文
共 16 条
[1]   Strain distributions in quantum dots of arbitrary shape [J].
Andreev, AD ;
Downes, JR ;
Faux, DA ;
O'Reilly, EP .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :297-305
[2]  
CARRIER GF, 1944, Q APPL MATH, V2, P31
[3]   Elastic and piezoelectric fields around a buried quantum dot: A simple picture [J].
Davies, JH .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (03) :1358-1365
[4]   Theory of potential modulation in lateral surface superlattices. III. Two-dimensional superlattices and arbitrary surfaces [J].
Davies, JH ;
Petticrew, DE ;
Long, AR .
PHYSICAL REVIEW B, 1998, 58 (16) :10789-10799
[5]  
EDWARDS RH, 1951, J APPL MECH-T ASME, V18, P19
[6]   INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE [J].
GRUNDMANN, M ;
STIER, O ;
BIMBERG, D .
PHYSICAL REVIEW B, 1995, 52 (16) :11969-11981
[7]   STRAIN-INDUCED CONFINEMENT OF CARRIERS TO QUANTUM WIRES AND DOTS WITHIN AN INGAAS-INP QUANTUM WELL [J].
KASH, K ;
BHAT, R ;
MAHONEY, DD ;
LIN, PSD ;
SCHERER, A ;
WORLOCK, JM ;
VANDERGAAG, BP ;
KOZA, M ;
GRABBE, P .
APPLIED PHYSICS LETTERS, 1989, 55 (07) :681-683
[8]   DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].
LEONARD, D ;
KRISHNAMURTHY, M ;
REAVES, CM ;
DENBAARS, SP ;
PETROFF, PM .
APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205
[9]   LUMINESCENCE FROM EXCITED-STATES IN STRAIN-INDUCED INXGA1-XAS QUANTUM DOTS [J].
LIPSANEN, H ;
SOPANEN, M ;
AHOPELTO, J .
PHYSICAL REVIEW B, 1995, 51 (19) :13868-13871
[10]   Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations [J].
Pryor, C .
PHYSICAL REVIEW B, 1998, 57 (12) :7190-7195