Effect of deposition temperature on the growth of yttria-stabilized zirconia thin films on Si(111) by chemical vapor deposition

An experimental study was made on the effect of deposition temperature on the growth of yttria-stabilized zirconia (YSZ) thin films in the chemical vapor deposition (CVD) process. The YSZ thin films were obtained in a temperature range of 650 degrees-850 degrees C, using P-diketone chelates and a Si(lll) substrate. Dense and mirrorlike YSZ films with uniform thickness were prepared; the deposition rate was 12-20 mm/min at those temperatures. An examination of the crystalline structure of the YSZ films was made, and the appropriate temperature for the growth of c-axis-oriented YSZ thin films using a Si(lll) substrate was determined. The quality of the YSZ films was strongly dependent on the deposition temperature. As the temperature increased, the film growth mechanism changed from being controlled by surface reaction to being controlled by gasphase diffusion.