Raman and electron paramagnetic resonance studies of spark-processed Si and Ge

被引：2

作者：

Chang, SS ^{[1
]}

Bowmaker, GA

机构：

[1] Kangnung Natl Univ, Dept Ceram Engn, Kangwon Do 210702, Kangnung, South Korea

[2] Univ Auckland, Dept Chem, Auckland 1, New Zealand

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 95卷 / 03期

关键词：

photoluminescence; semiconductor; electron paramagnetic resonance; Raman spectroscopy;

D O I：

10.1016/S0921-5107(02)00289-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Raman and electron paramagnetic resonance (EPR) spectra are investigated on spark-processed Si (sp-Si) and Ge (sp-Ge), which strongly luminesce in the UV/blue and green regions of the visible spectrum. The observed small shifts and broadening of the Raman signal indicate the presence of Si, and Ge particles of about 8 nm. The EPR studies revealed two distinct paramagnetic defect centers for the UV/blue luminescing sp-Si, whereas only one paramagnetic defect with reduced EPR intensity was observed for the green luminescing sp-Si. Further, no paramagnetic defect was observed for sp-Ge. The determined g-factor for spark-processed green luminescing Si and for the strongest signal in UV/blue luminescing Si was 2.0071. EPR analysis indicates that no correlation is observed for the PL intensity and electron paramagnetic defect concentration from sp-Si, and Ge. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：290 / 294

页数：5

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