Field emission from GaN nanobelts with herringbone morphology

被引：41

作者：

Luo, LQ

Yu, K

Zhu, ZQ

Zhang, YS

Ma, HL

Xue, CS

Yang, YG

Chen, SQ

机构：

[1] E China Normal Univ, Dept Elect Engn, Shanghai 200062, Peoples R China

[2] Shandong Univ, Sch Phys & Microelect, Jinan 250061, Peoples R China

[3] Shangdong Normal Univ, Inst Semicond, Chem Funct Mat Lab, Jinan 250014, Peoples R China

来源：

MATERIALS LETTERS | 2004年 / 58卷 / 22-23期

基金：

中国国家自然科学基金;

关键词：

GaN nanobelts; ammoniating; field emission;

D O I：

10.1016/j.matlet.2004.05.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gallium nitride (GaN) nanobelts with herringbone morphology are successfully synthesized on Si (111) substrates through ammoniating Ga2O3 thin films deposited by radiofrequency magnetron sputtering. X-ray diffraction (XRD), scanning electronic microscope (SEM), transmission electronic microscope (TEM) and high-resolution TEM (HRTEM) are carried out to analyze as-synthesized GaN nanobelts. The field emission (FE) measurements show that the as-synthesized GaN nanobelts have a very low turn-on field of 6.1 V/mum at the current density of 0.1 muA/cm(2). It is found that the Fowler-Nordheim (FN) plot exhibits two stages. The experimental results demonstrated that there were great potential applications of the herringbone-like GaN nanobelts for flat panel displays. (C) 2004 Elsevier B.V. All rights reserved.

引用

收藏

页码：2893 / 2896

页数：4

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