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Growth, structural, and electrical investigation of self-assembled InAs quantum wires on (001)InP

被引：51
作者：
Walther, C
Hoerstel, W
Niehus, H
Erxmeyer, J
Masselink, WT
机构：
[1] Humboldt Univ, Dept Phys, D-10115 Berlin, Germany
[2] Fachhsch Tech Wirtschaft & Gestaltung Wismar, Dept Elect Engn & Comp Sci, D-23966 Wismar, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 04期
关键词：
quantum wires; strained epitaxy; InAs; MBE; quantum dots;
D O I：
10.1016/S0022-0248(99)00761-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The deposition of lattice mismatched InAs on (0 0 1)InP by gas source molecular beam epitaxy leads to the formation of quantum sires in contrast to the familiar dot formation in the InAs/GaAs system. The paper describes two processes: (i) the formation of a two-dimensional, alloyed layer InAsyP1-y in a pre-deposition phase and (ii) the strain relaxation process into wire-like structures, when depositing InAs on top. The quantum wires have been investigated using atomic force microscopy, transmission electron microscopy, and transport anisotropy measurements. (C) 2000 Elsevier Science B.V. All rights reserved.
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页码：572 / 580
页数：9
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