Time-resolved study of Raman gain in highly confined silicon-on-insulator waveguides

被引：110

作者：

Xu, QF ^{[1
]}

Almeida, VR ^{[1
]}

Lipson, M ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

OPTICS EXPRESS | 2004年 / 12卷 / 19期

关键词：

D O I：

10.1364/OPEX.12.004437

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We show time-resolved measurement of Raman gain in Silicon submicron-size planar waveguide using picosecond pump and probe pulses. A net nonlinear gain of 6 dB is obtained in a 7-mm long waveguide with 20.7-W peak pump power. We demonstrate an ultrafast all-optical switch based on the free-carrier dispersion effect in the silicon waveguide, whose transmission is enhanced by more than 13 dB due to the Raman effect. (C) 2004 Optical Society of America.

引用

页码：4437 / 4442

页数：6

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