Interfacial oxide formation and oxygen diffusion in rare earth oxide-silicon epitaxial heterostructures

We report on controlled interfacial oxide formation within epitaxial (LaxY1-x)(2)O-3/Si(111) heterostructures under UHV environments. Results indicate that exposure of these epitaxial films to molecular oxygen right after deposition results in the formation of an amorphous interfacial layer thicker than that expected when a bare silicon surface is exposed to molecular oxygen under the same conditions. The results imply significant oxygen diffusion through the epitaxial dielectric and reaction at the silicon-oxide interface. Arguments have been developed to explain these observations. (C) 2002 American Institute of Physics.