Effect of texture on the electromigration of CVD copper

被引：48

作者：

Ryu, C

Loke, ALS

Nogami, T

Wong, SS

机构：

来源：

1997 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 35TH ANNUAL | 1997年

关键词：

D O I：

10.1109/RELPHY.1997.584260

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the effect of texture on the electromigration lifetime of CVD Cu. Using the proper seed layers, either (111) or (200) textured CVD Cu films with similar grain size distributions have been obtained. The electromigration lifetime of (111) CVD Cu is about four times longer than that of (200) CVD Cu. The activation energy of electromigration is about 0.8 eV for both (111) and (200) CVD Cu films.

引用

页码：201 / 205

页数：5