IGBT History, State-of-the-Art, and Future Prospects

被引：330

作者：

Iwamuro, Noriyuki ^{[1
]}

Laska, Thomas ^{[2
]}

机构：

[1] Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

[2] Infineon Technol AG, D-85579 Neubiberg, Germany

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 03期

关键词：

Fast switching characteristics; forward voltage drop; injection enhancement (IE) effect combined with the IGBT structure (IEGT); insulated gate bipolar transistor (IGBT); intelligent gate drive; junction temperature; optimum carrier distribution; power density; reverse blocking IGBT (RB IGBT); reverse conducting IGBT (RC IGBT); short circuit safe operating area (SOA); thermal management; thin wafer technology; MODE; CHANNEL;

D O I：

10.1109/TED.2017.2654599

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

An overview on the history of the development of insulated gate bipolar transistors (IGBTs) as one key component in today's power electronic systems is given; the state-of-the-art device concepts are explained as well as an detailed outlook about ongoing and foreseeable development steps is shown. All these measures will result on the one hand in ongoing power density and efficiency increase as important contributors for worldwide energy saving and environmental protection efforts. On the other hand, the exciting competition of more maturing Si IGBT technology with the wide bandgap successors of GaN and SiC switches will go on.

引用

页码：741 / 752

页数：12

共 57 条

[1]

Amro R., 2005, 2005 European Conference on Power Electronics and Applications, P10

[2]

Baliga B. J., 1982, International Electron Devices Meeting. Technical Digest, P264

[3]

BALIGA BJ, 1979, ELECTRON LETT, V15, P645, DOI 10.1049/el:19790459

[4]

Beckedahl P., 2011, P POW EL INT MOT POW, P247

[5]

Dewar S., 2000, PCIM 2000. Europe Official Proceedings of the Forty-First International Power Conversion. Conference, P593

[6]

Eikyu K, 2016, INT SYM POW SEMICOND, P211, DOI 10.1109/ISPSD.2016.7520815

[7]

Feng H, 2016, INT SYM POW SEMICOND, P203, DOI 10.1109/ISPSD.2016.7520813

[8]

Goodman A. M., 1983, International Electron Devices Meeting 1983. Technical Digest, P79

[9]

Guth Karsten, 2010, Proceedings of the International Exhibition and Conference for Power Electronics, Intelligent Motion, Power Quality. PCIM 2010, P232

[10]

HARADA M, 1994, ISPSD '94 - PROCEEDINGS OF THE 6TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P411, DOI 10.1109/ISPSD.1994.583811

← 1 2 3 4 5 6 →