Nucleation and growth of supported clusters at defect sites: Pd/MgO(001)

被引:205
作者
Haas, G [1 ]
Menck, A
Brune, H
Barth, JV
Venables, JA
Kern, K
机构
[1] Ecole Polytech Fed Lausanne, Inst Phys Expt, CH-1015 Lausanne, Switzerland
[2] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
[3] Univ Sussex, CPES, Brighton BN1 9QH, E Sussex, England
[4] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
关键词
D O I
10.1103/PhysRevB.61.11105
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nucleation and growth of Pd on cleaved MgO(001) surfaces were studied by variable-temperature atomic force microscopy in the temperature range 200-800 K. Constant island densities (similar to 3x10(12)cm(-2)) were observed over a wide temperature range, indicating nucleation kinetics governed by point defects with a high trapping energy. These results are compared to a rate equation model that describes the principal atomistic nucleation and growth processes, including nucleation at attractive point defects. Energies for defect trapping, adsorption, surface diffusion, and pair binding are deduced, and compared with recent nb initio calculations.
引用
收藏
页码:11105 / 11108
页数:4
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