Simulations of space-clamp errors in estimating parameters of voltage-gated conductances localized at different electrotonic distances

被引：3

作者：

Castelfranco, AM ^{[1
]}

Hartline, DK ^{[1
]}

机构：

[1] Univ Hawaii Manoa, PBRC, Bekesy Lab Neurobiol, Honolulu, HI 96822 USA

来源：

NEUROCOMPUTING | 2002年 / 44卷

基金：

美国国家科学基金会;

关键词：

voltage clamp; space-clamp errors; Hodgkin-Huxley conductances;

D O I：

10.1016/S0925-2312(02)00357-0

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

The ability to correct parameters of voltage-gated conductances measured under poor spatial control by a point voltage clamp could rescue much flawed experimental data, but requires a detailed understanding of errors caused by poor space clamp. We evaluated errors in simulated voltage-clamp experiments on a soma with a single (0.5lambda) cylindrical process having a patch of voltage-dependent Hodgkin-Huxley channels placed at various distances from the soma, Kinetic and steady-state parameters were obtained by fitting the current curves. Most parameter errors increased as the patch was located more distally on the neurite. (C) 2002 Published by Elsevier Science B.V.

引用

页码：75 / 80

页数：6