Visible light emission from Si nanocrystals grown by ion implantation and subsequent annealing

被引：125

作者：

Guha, S

Pace, MD

Dunn, DN

Singer, IL

机构：

[1] Naval Research Laboratory, Washington

[2] Code 6651, Condensed Matter Physics Div.

[3] Code 6122, Chemistry Div.

[4] Code 6176, Chemistry Div., ASEE

[5] Code 6176, Chemistry Div.

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 10期

关键词：

D O I：

10.1063/1.118275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL), electron spin resonance (ESR), and high resolution transmission electron microscopy (HRTEM) were used to investigate the luminescence mechanism in Si nanocrystals, Si ions were implanted in SiO2 films at 190 keV to a dose of 3 x 10(17)/cm(2). An intense photoluminescence (PL) band at 755 nm (1.65 eV) was observed when the implanted films were annealed above 800 degrees C in air or in nitrogen; HRTEM images showed Si nanocrystals of sizes between 1 and 6 nm from these annealed samples. ESR indicated Si dangling bonds. Upon annealing at 900 degrees C in air a few times, the particle sizes were reduced to less than 2 nm due to oxidation. The red PL band is attributed to emission from Si nanocrystals. (C) 1997 American Institute of Physics.

引用

页码：1207 / 1209

页数：3

共 16 条

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