High Power, high reliability CW and QCW operation of single AlGaAs laser diode array design

被引:7
作者
Lu, B [1 ]
Zucker, E [1 ]
Wolak, E [1 ]
Dohle, R [1 ]
Zou, D [1 ]
Bicknese, S [1 ]
机构
[1] SDL Inc, San Jose, CA 95134 USA
来源
LASER DIODES AND LEDS IN INDUSTRIAL, MEASUREMENT, IMAGING, AND SENSORS APPLICATIONS II; TESTING, PACKAGING AND RELIABILITY OF SEMICONDUCTOR LASERS V | 2000年 / 3945卷
关键词
high power; semiconductor laser arrays and stacks; AlGaAs; CW and QCW;
D O I
10.1117/12.380546
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A single laser diode bar design, based on the AlGaAs material system, has been developed for high power, high reliability operation at a variety of CW and QCW operating conditions. The bar has a cavity length of 750 mu m and a fill factor of 40%. Typical CW operation has a threshold current of similar to 10A and a conversion efficiency of >45% at 40W. A variety of lifetests have been conducted at both CW and QCW operating conditions from the same bar design. On-going 3000hr CW operation at 45C and 40W shows an extrapolated median lifetime (20% current increase) of 16,500hrs at 45C or similar to 50,000hrs at 25C (with 0.45eV activation energy). On-going 3000hr QCW operation at 60C/60W and 35C/100W, with a pulse width of 200 mu s and a duty factor of 2%, shows a median lifetime of similar to 10 billion shots and similar to 5 billion shots, respectively. In addition to single bar operation, this bar design can be stacked in various 2-D configurations. A 4 bar linear stack operating at 160W CW and a 6 bar vertical stack operating at 240W CW have been developed with superior performance. Results for high duty and low duty QCW stacks will also be presented.
引用
收藏
页码:293 / 300
页数:8
相关论文
共 4 条
[1]  
Botez D., 1998, Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243), P274, DOI 10.1109/LEOS.1998.737836
[2]  
MAWST LJ, 1999, CLEO99 MAY, P43
[3]  
PITTROFF W, 1998, LEOS98 1201, P278
[4]  
Zucker E., 1999, LEOS99 1108, P72