Low-temperature processing of a solution-deposited CuInSSe thin-film solar cell

被引：70

作者：

Hou, William W. ^{[1
]}

Bob, Brion ^{[2
]}

Li, Sheng-han ^{[1
]}

Yang, Yang ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

[2] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 24期

基金：

美国国家科学基金会;

关键词：

Non-vacuum; Spin-coating; Solar cell; Photovoltaics; Hydrazine; CuInSSe;

D O I：

10.1016/j.tsf.2009.06.032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A low-temperature (similar to 350 degrees C) solution-processed CuInSSe photovoltaic cell is reported. The CuInSSe film was solution-deposited via spin-coating from a precursor solution consisting of metal chalcogenides (Cu2S and In2Se3) dissolved in hydrazine (N2H4). X-ray diffraction data indicated a full conversion from the hydrazine precursor to CuInSxSe2-x structure at 350 degrees C with an average crystallite size of approximately 45 nm. Bandgap tuning of the CuInSxSe2-x was achieved by varying the excess amount of sulfur in the precursor solution. Based on the (220) reflection of the XRD pattern, the bandgap of CuInSxSe2-x ranged from 1.00 to 1.14 eV. Standard testing conditions at 1-sun intensity resulted in a power conversion efficiency of 7.43%. Published by Elsevier B.V.

引用

页码：6853 / 6856

页数：4

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