Morphology and electronic structure in nitrogen-doped ultrananocrystalline diamond

被引:179
作者
Birrell, J
Carlisle, JA
Auciello, O
Gruen, DM
Gibson, JM
机构
[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[3] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
关键词
D O I
10.1063/1.1503153
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ultrananocrystalline diamond (UNCD) thin films consist of 2-5 nm grains of pure sp(3)-bonded carbon and similar to0.5-nm-wide grain boundaries with a disordered mixture of sp(2)- and sp(3)-bonded carbon. UNCD exhibits many interesting materials properties that are a direct consequence of its nanoscale morphology. In this work, we report the changes in morphology induced in UNCD by the addition of nitrogen gas to the Ar/CH4 microwave plasma, as studied using high-resolution transmission electron microscopy and nanoprobe-based electron energy-loss spectroscopy. Both the grain size and grain-boundary widths increase with the addition of N-2, but the overall bonding structure in both regions remains mostly unchanged. These results are used to explain the variation of materials properties of nitrogen-incorporated UNCD films. (C) 2002 American Institute of Physics.
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页码:2235 / 2237
页数:3
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