Cost of ownership analysis for patterning using step and flash imprint lithography

被引：17

作者：

Sreenivasan, SV ^{[1
]}

Willson, CG ^{[1
]}

Schumaker, NE ^{[1
]}

Resnick, DJ ^{[1
]}

机构：

[1] Univ Texas, Austin, TX 78712 USA

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2 | 2002年 / 4688卷

关键词：

D O I：

10.1117/12.472275

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

While the critical dimension in the microelectronics industry is continually going down due to developments in photolithography, it is coming at the expense of exponential increase in lithography tool costs and rising photomask costs. Step and Flash Imprint Lithography (S-FIL) is a nano-patterning technique that results in significantly lower cost of the lithography tool and process consumables. In this study, a comparison of S-FIL with Extreme Ultraviolet (EUV) photolithography technique is provided at the 50nm nodes. Advantages and disadvantages of S-FIL for various application sectors are provided. Finally, cost of ownership (CoO) computations of S-FIL versus EUV is provided. CoO computations indicate that S-FIL may be the cost-effective technology in the sub-100nm domain, particularly for emerging devices that are required in low volumes.

引用

页码：903 / 909

页数：3