Structural phase transitions of Pb-adsorbed Si(111) surfaces at low temperatures

被引:72
作者
Horikoshi, K
Tong, X
Nagao, T
Hasegawa, S
机构
[1] Univ Tokyo, Sch Sci, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
[2] Japan Sci & Technol Corp, Core Res Evolut Sci & Technol, Kawaguchi, Saitama 332, Japan
关键词
D O I
10.1103/PhysRevB.60.13287
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We found two types of commensurate-incommensurate transition on Pb-adsorbed Si(111) surfaces using reflection high-energy electron diffraction (RHEED) below room temperature (RT); a hexagonal incommensurate (HIC) phase changed to a root 7 x root 3-Pb superstructure around 250 K, and a transient phase between the HIC phase and a striped incommensurate phase changed to a root 43 x root 3-Pb superstructure at 130 K. We constructed a surface structure map in ranges of temperature from 90 K to 500 K and ph coverage from 0.8 to 1.5 atomic layers including these new phases. We found another structure change where streaks with a 3 x 3 periodicity began to appear in RHEED just below RT when the root 3 x root 3-Pb phase at 1/3 atomic layer of Pb was cooled. [S0163-1829(99)05039-0].
引用
收藏
页码:13287 / 13290
页数:4
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