Valence band offsets at Cu(In,Ga)Se2/Zn(O,S) interfaces

被引：17

作者：

Adler, Tobias ^{[1
]}

Botros, Miriam ^{[1
,2
]}

Witte, Wolfram ^{[2
]}

Hariskos, Dimitrios ^{[2
]}

Menner, Richard ^{[2
]}

Powalla, Michael ^{[2
]}

Klein, Andreas ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Inst Mat Sci, Div Surface Sci, D-64287 Darmstadt, Germany

[2] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, D-70565 Stuttgart, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2014年 / 211卷 / 09期

关键词：

buffer layers; Cu(In; Ga)Se-2; photoemission; valence band offset; ZnO; ZnS; FILM SOLAR-CELLS; TRANSPARENT CONDUCTING OXIDES; DEPENDENT DEFECT FORMATION; CHEMICAL BATH DEPOSITION; ATOMIC LAYER DEPOSITION; BUFFER LAYERS; FERMI-LEVEL; II-VI; JUNCTION FORMATION; ELECTRONIC-PROPERTIES;

D O I：

10.1002/pssa.201330353

中图分类号：

T [工业技术];

学科分类号：

120111 [工业工程];

摘要：

The energy band alignment at interfaces between Cu-chalcopyrites and Zn(O,S) buffer layers, which are important for thin-film solar cells, are considered. Valence band offsets derived from X-ray photoelectron spectroscopy for Cu(In,Ga) Se-2 absorber layers with CdS and Zn(O,S) compounds are compared to theoretical predictions. It is shown that the valence band offsets at Cu(In, Ga)Se-2/Zn(O,S) interfaces approximately follow the theoretical prediction and vary significantly from sample to sample. The integral sulfide content of chemical bath deposited Zn(O,S) is reproducibly found to be 50-70%, fortuitously resulting in a conduction band offset suitable for solar cell applications with Cu(In,Ga)Se-2 absorber materials. The observed variation in offset can neither be explained by variation of the Cu content in the Cu(In, Ga)Se-2 near the interface nor by local variation of the chemical composition. Fermi level pinning induced by high defect concentrations is a possible origin of the variation of band offset. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1972 / 1980

页数：9

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