A major emerging market for ferroelectric non-volatile memories is the RF tag. In that application, low power and low voltage memory operation is essential. Historically, the lead zirconate titanate (PZT) family has not been noted for low voltage hysteresis loops but this is a function of process and not a property of the material. The authors have reduced the saturation voltage for a PZT sol gel process to less than 2.5 V while achieving greater than 40 mu C/cm(2) delta P for 20/80 PZT using platinum electrodes. Niobium doped PZT has also been fabricated with the low saturation voltage while producing greater than 30 mu C/cm(2) delta P. The authors report on the electrical properties of these films.
