Synchrotron X-ray scattering techniques for microelectronics-related materials studies

被引:17
作者
Jordan-Sweet, JL
机构
关键词
D O I
10.1147/rd.444.0457
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
X-ray diffraction techniques using synchrotron radiation play a vital role in the understanding of structural behavior for a wide range of materials important in microelectronics, The extremely high flux of X-rays produced by synchrotron storage rings makes it possible to probe layers and interfaces in complicated stacked structures, characterize low-atomic-weight materials such as polymers, and study in situ phase transformations, to name only a few applications. In this paper, following an introduction to synchrotron radiation, we describe the capabilities of the IBM/MIT X-ray beamlines at the National Synchrotron Light Source (NSLS), Brookhaven National Laboratory (BNL), A range of techniques are introduced, and examples of their applicability to the study of microelectronics-related materials phenomena are described.
引用
收藏
页码:457 / 476
页数:20
相关论文
共 66 条
[1]  
[Anonymous], ADV XRAY ANAL
[2]  
BREFELD W, 1991, HDB SYNCHROTRON RAD, P269
[3]   The computing revolution and the physics community [J].
Brenner, AE .
PHYSICS TODAY, 1996, 49 (10) :24-30
[4]  
*BROOKH NAT LAB, 1990, BNL45765
[5]  
*BROOKH NAT LAB, 1995, BNL61553
[6]   Lowering the formation temperature of the C54-TiSi2 phase using a metallic interfacial layer [J].
Cabral, C ;
Clevenger, LA ;
Harper, JME ;
dHeurle, FM ;
Roy, RA ;
Saenger, KL ;
Miles, GL ;
Mann, RW .
JOURNAL OF MATERIALS RESEARCH, 1997, 12 (02) :304-307
[7]   Low temperature formation of C54-TiSi2 using titanium alloys [J].
Cabral, C ;
Clevenger, LA ;
Harper, JME ;
dHeurle, FM ;
Roy, RA ;
Lavoie, C ;
Saenger, KL ;
Miles, GL ;
Mann, RW ;
Nakos, JS .
APPLIED PHYSICS LETTERS, 1997, 71 (24) :3531-3533
[8]  
Cabral C, 1997, MATER RES SOC SYMP P, V441, P295
[9]  
CABRAL C, 1995, MATER RES SOC SYMP P, V375, P253
[10]  
CABRAL C, 1996, ADV MET INT SYST ULS, P439