Ferroelectric domain reversal in LiNbO3 crystals using high-voltage atomic force microscopy

被引：44

作者：

Agronin, A ^{[1
]}

Rosenwaks, Y ^{[1
]}

Rosenman, G ^{[1
]}

机构：

[1] Tel Aviv Univ, Dept Elect Engn Phys Elect, IL-69978 Ramat Aviv, Israel

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 03期

关键词：

D O I：

10.1063/1.1772858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-voltage atomic force microscopy is used for nanoscale polarization reversal in LiNbO3 single crystals. The tailored domain patterns have been observed using piezoelectric force microscopy and etching techniques. A variety of domain shapes preserving the elementary crystallographic symmetry have been obtained. It has been found that the sidewise domain wall motion under the huge electric field near the apex of atomic force microscope tip occurs in isotropic manner. The dependence of the domain equilibrium size on the applied high voltage is analyzed and discussed. (C) 2004 American Institute of Physics.

引用

页码：452 / 454

页数：3

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