An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond

被引：22

作者：

Tsujikawa, S ^{[1
]}

Mine, T ^{[1
]}

Shimamoto, Y ^{[1
]}

Tonomura, O ^{[1
]}

Tsuchiya, R ^{[1
]}

Ohnishi, K ^{[1
]}

Hamamura, H ^{[1
]}

Torii, K ^{[1
]}

Onai, T ^{[1
]}

Yugami, J ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan

来源：

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIT.2002.1015453

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a SiN gate dielectric with oxygen-enriched interface (OI-SiN). A process in which oxygen atoms are incorporated after forming SiN provides enhanced nitrogen concentration and oxygen-enriched interface simultaneously even in the region of EOT < 1.5 nm. Thus we developed an OI-SiN gate dielectric with EOT of 0.9 nm that brought about low gate leakage current, good interface properties and excellent resistance to boron penetration.

引用

页码：202 / 203

页数：2