Temperature dependence of the exciton transition in semiconductor quantum dots

被引:49
作者
Liptay, Thomas J. [1 ]
Ram, Rajeev J. [1 ]
机构
[1] MIT, Elect Res Lab, Cambridge, MA 02139 USA
关键词
D O I
10.1063/1.2400107
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors measure the temperature dependence of the first absorption feature (dE/dT) for different sizes of CdSe/ZnS nanocrystals. In contrast to previous experiments, they find that dE/dT is experimentally identical for all nanocrystal sizes considered and agrees well with the bulk CdSe value. They show that a first order model that only considers the exciton confinement energy can explain the existing experimental dE/dT values for both epitaxial quantum dots (InAs, In0.6Ga0.4As, GaAs) and colloidal nanocrystals (CdSe, PbS, PbSe). (c) 2006 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 16 条
[1]   (CdSe)ZnS core-shell quantum dots: Synthesis and characterization of a size series of highly luminescent nanocrystallites [J].
Dabbousi, BO ;
RodriguezViejo, J ;
Mikulec, FV ;
Heine, JR ;
Mattoussi, H ;
Ober, R ;
Jensen, KF ;
Bawendi, MG .
JOURNAL OF PHYSICAL CHEMISTRY B, 1997, 101 (46) :9463-9475
[2]   TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN SEMICONDUCTORS [J].
FAN, HY .
PHYSICAL REVIEW, 1951, 82 (06) :900-905
[3]   Homogeneous broadening of the zero-optical-phonon spectral line in semiconductor quantum dots [J].
Goupalov, SV ;
Suris, RA ;
Lavallard, P ;
Citrin, DS .
NANOTECHNOLOGY, 2001, 12 (04) :518-522
[4]   Theory of pure dephasing and the resulting absorption line shape in semiconductor quantum dots [J].
Krummheuer, B ;
Axt, VM ;
Kuhn, T .
PHYSICAL REVIEW B, 2002, 65 (19) :1-12
[5]  
Lee J, 2000, ADV MATER, V12, P1102, DOI 10.1002/1521-4095(200008)12:15<1102::AID-ADMA1102>3.0.CO
[6]  
2-J
[7]  
MAHAN GD, 2000, MANY PARTICLE PHYS, P224
[8]   EXCITON LO-PHONON COUPLINGS IN SPHERICAL SEMICONDUCTOR MICROCRYSTALLITES [J].
NOMURA, S ;
KOBAYASHI, T .
PHYSICAL REVIEW B, 1992, 45 (03) :1305-1316
[9]   Size-dependent temperature variation of the energy gap in lead-salt quantum dots [J].
Olkhovets, A ;
Hsu, RC ;
Lipovskii, A ;
Wise, FW .
PHYSICAL REVIEW LETTERS, 1998, 81 (16) :3539-3542
[10]   Temperature dependence of the excitonic band gap in InxGa1-xAs/GaAs self-assembled quantum dots -: art. no. 085328 [J].
Ortner, G ;
Schwab, M ;
Bayer, M ;
Pässler, R ;
Fafard, S ;
Wasilewski, Z ;
Hawrylak, P ;
Forchel, A .
PHYSICAL REVIEW B, 2005, 72 (08)