Effects of intrinsic spin on electronic transport through magnetic barriers

被引：96

作者：

Majumdar, A

机构：

[1] Department of Electrical Engineering, Princeton University, Princeton

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.54.11911

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is shown that the interaction of the intrinsic spin of two-dimensional electrons with the magnetic field significantly changes the tunneling probability of electrons through magnetic barriers and the conductance of devices having such barriers with respect to the case where this interaction is neglected. It is also shown that certain structures having these magnetic barriers possess the ability to distinguish the two possible spin states of the electrons.

引用

收藏

页码：11911 / 11913

页数：3

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