Very low threshold lasing in Er3+ doped ZBLAN microsphere

被引：36

作者：

von Klitzing, W

Jahier, E

Long, R

Lissillour, F

Lefevre-Seguin, V

Hare, J

Raimond, JM

Haroche, S

机构：

[1] Ecole Normale Super, Lab Kastler Brossel, F-75231 Paris, France

[2] ENSSAT, Lab Optron, F-22305 Lannion, France

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 20期

关键词：

D O I：

10.1049/el:19991009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A green room temperature up-conversion laser has been demonstrated in a 120 mu m diameter microsphere of Er3+ doped ZBLAN. Lasing occurs around 540nm with a 801nm diode laser pump. The lasing threshold of only 30 mu W of absorbed power is over two orders of magnitude lower than the lowest previously observed.

引用

收藏

页码：1745 / 1746

页数：2

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