Atomic layer deposition (ALD) technology for reliable RF MEMS

被引：15

作者：

Hoivik, N ^{[1
]}

Elam, JW ^{[1
]}

George, SM ^{[1
]}

Gupta, KC ^{[1
]}

Bright, VM ^{[1
]}

Lee, YC ^{[1
]}

机构：

[1] Univ Colorado, NSF Ctr Adv Mfg & Packaging Microwave Opt & Digit, Dept Mech Engn, Boulder, CO 80309 USA

来源：

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年

关键词：

D O I：

10.1109/MWSYM.2002.1011881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A nano-layer inorganic coating technology has been developed to protect RF MEMS from electrical shorting as well as long-term reliability failures due to charging or moisture. The combination of alumina dielectric and zinc-oxide conducting layers can be constructed one atomic layer at a time. At 177 degreesC, the released RF MEMS devices can be coated on a wafer or as a single device with conformal, inorganic coverage where the thickness and electrical conductivity can be controlled to meet desired values. With additional chemical treatment, the surface could be made hydrophobic to avoid moisture-induced stiction. The long-term reliability problem is the main barrier that impedes the growth of RF MEMS applications. This novel atomic layer deposition (ALD) technology can help in overcoming this limitation.

引用

页码：1229 / 1232

页数：4

共 8 条

[1] Surface chemistry for atomic layer growth [J].

George, SM ;

Ott, AW ;

Klaus, JW .

JOURNAL OF PHYSICAL CHEMISTRY, 1996, 100 (31) :13121-13131

[2]

GOLDSMITH, 2001, INT J RF MICROWAVE C, V11

[3]

GOLDSMITH C, 2001, IEEE INT MICR S PHOE

[4]

Hoivik N, 2002, PROC IEEE MICR ELECT, P455, DOI 10.1109/MEMSYS.2002.984301

[5]

Hoivik N, 2001, IEEE MTT-S, P2115, DOI 10.1109/MWSYM.2001.967331

[6]

Ritala M, 1999, CHEM VAPOR DEPOS, V5, P7, DOI 10.1002/(SICI)1521-3862(199901)5:1<7::AID-CVDE7>3.0.CO

[7]

2-J

[8] RF MEMS from a device perspective [J].

Yao, JJ .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2000, 10 (04) :R9-R38

← 1 →