Observation of single electron-hole recombination and photon-pumped current in an asymmetric Si single-electron transistor

被引：47

作者：

Fujiwara, A

Takahashi, Y

Murase, K

机构：

[1] NTT Basic Research Laboratories, Kanagawa, 243-01, 3-1 Morinosato Wakamiya, Atsugi

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.78.1532

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We observed a novel type of photocurrent by investigating Coulomb blockade oscillations around the few-electron regime in an asymmetric Si single-electron transistor. Photoexcitation generates new current peaks below the threshold voltage only for one polarity of source-drain voltage. Under low excitation, such photocurrent exhibits intermittent behavior with sudden drops and rises. The phenomena can be ascribed to the interplay of photogenerated holes and single-electron tunneling via the island. The sudden drop is a manifestation of single-electron recombination with a hole in the island.

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页码：1532 / 1535

页数：4

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