Defect and mixed conductivity in nanocrystalline doped cerium oxide

被引:56
作者
Suzuki, T [1 ]
Kosacki, I [1 ]
Anderson, HU [1 ]
机构
[1] Univ Missouri, Elect Mat Appl Res Ctr, Rolla, MO 65401 USA
关键词
D O I
10.1111/j.1151-2916.2002.tb00302.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The results obtained from a study on the microstructure and the electrical properties of Gd-doped CeO2 thin films were reported. Dense, nanocrystalline films on sapphire substrates are prepared using a polymeric precursor spin coating technique. The electrical conductivity was studied as a function of temperature and oxygen activity and correlated with the grain size. For nanocrystalline Gd-doped CeO2 thin films, the ionic conductivity increased with decreasing activation energy as the grain size decreased. A conductivity model was developed to analyze P-O2 behavior of the electrical conductivity. Using the conductivity model, the hopping energy of electron conduction and the enthalpy of oxygen vacancy formation were determined for different microstructures.
引用
收藏
页码:1492 / 1498
页数:7
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