Measurements of the bulk, C-axis electromechanical coupling constant as a function of AlN film quality

被引:90
作者
Naik, RS [1 ]
Lutsky, JJ
Reif, R
Sodini, CG
Becker, A
Fetter, L
Huggins, H
Miller, R
Pastalan, J
Rittenhouse, G
Wong, YH
机构
[1] Intel Corp, Portland Technol Dev Grp, Hillsboro, OR 97124 USA
[2] Natl Semicond Corp, E Coast Labs, South Portland, ME 04106 USA
[3] MIT, Microsyst Technol Lab, Cambridge, MA 02139 USA
[4] Lucent Technol, Wireless COmmun Grp, Murray Hill, NJ 07974 USA
关键词
D O I
10.1109/58.818773
中图分类号
O42 [声学];
学科分类号
070206 ; 082403 ;
摘要
Piezoelectric thin film AIN has great potential for on-chip devices such as thin-film resonator (TFR)based bandpass filters. The AIN electromechanical coupling constant, K-2, is an important material parameter that determines the maximum possible bandwidth for bandpass filters. Using a previously published extraction technique, the bulk c-axis electromechanical coupling constant was measured as a function of the AIN x-ray diffraction rocking curve [full width at half maximum (FWHM)]. For FWHM values of less than approximately 4 degrees, K-2 saturates at approximately 6.5%, equivalent to the value for epitaxial A1N, For FWHM values >40 degrees K-2 gradually decreases to approximately 2.5% at a FWHM of 7.5 degrees. These results indicate that the maximum possible bandwidth for TFR-based bandpass filters using polycrystalline AIN is approximately 80 IL MHz and that, for 60-MHz bandwidth PCS applications, an AIN firm quality of >5.5 degrees FWHM is required.
引用
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页码:292 / 296
页数:5
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