Detection of microwave radiation by electronic fluid in high electron mobility transistors

被引:36
作者
Weikle, R [1 ]
Lu, JQ [1 ]
Shur, MS [1 ]
Dyakonov, MI [1 ]
机构
[1] AF IOFFE PHYS TECH INST,ST PETERSBURG,RUSSIA
关键词
high electron mobility transistors; microwave; detectors; two-dimensional electron gas;
D O I
10.1049/el:19961410
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors present a microwave detector which utilises the nonlinear properties of 2D electronic fluid in a high electron mobility transistor (HEMT). The detector operates between 8 and 18 GHz and the measured responsivity is in good agreement with the recent theory of 2D electronic fluids.
引用
收藏
页码:2148 / 2149
页数:2
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