DLTS investigation of acceptor states in P3MeT Schottky barrier diodes

被引：9

作者：

Jones, GW ^{[1
]}

Taylor, DM ^{[1
]}

Gomes, HL ^{[1
]}

机构：

[1] UNIV ALGARVE,UNIDAD CIENCIAS EXACTAS & HUMANAS,P-8000 FARO,PORTUGAL

来源：

SYNTHETIC METALS | 1997年 / 85卷 / 1-3期

关键词：

poly(3-methylthiophene); DLTS; Schottky barrier diodes;

D O I：

10.1016/S0379-6779(97)80262-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deep Level Transient Spectroscopy (DLTS) has been used to investigate hole traps in the depletion region of Schottky barrier diodes formed from electropolymerised poly(3-methylthiophene). The capacitance transients appear to be composed of a fast and a slow component. Analysis of the slower component using the ''rate window'' technique yields isochronal differential capacitance curves that depend on temperature in the manner predicted by theory.

引用

页码：1341 / 1342

页数：2