Characterization of high-k dielectrics with ToF-SIMS

被引：4

作者：

Ferrari, S ^{[1
]}

机构：

[1] INFM, Lab MDM, I-20041 Agrate Brianza, Italy

来源：

APPLIED SURFACE SCIENCE | 2004年 / 231卷

关键词：

high-k; interface; preferential sputtering; depth profiling;

D O I：

10.1016/j.apsusc.2004.03.122

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, we consider ToF-SIMS as a tool to monitor interfacial SiO2 at high-k/Si interfaces. By comparing TEM with ToF-SIMS profiles, a correlation between interfacial SiO2 formation and SiO2- signal is drawn, leading to a methodology to measure interfacial SiO2 layer thickness by means of ToF-SIMS. A strong preferential sputtering of oxygen in the high-k layer is observed, and this affects the possibility to determine interfacial SiO2 layer thickness with ToF-SIMS. Interfacial effects occurring at the high-k/SiO2/interface are discussed, and a simple qualitative model for the sputtering process at the interface is presented. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：609 / 613

页数：5

共 8 条

[1] Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO2 films annealed in O2 [J].