The application of advanced techniques for complex focused-ion-beam device modification

被引：14

作者：

Abramo, MT

Hahn, LL

机构：

[1] IBM Microelectronics Division, Essex Junction, VT 05452

来源：

MICROELECTRONICS AND RELIABILITY | 1996年 / 36卷 / 11-12期

关键词：

D O I：

10.1016/0026-2714(96)00195-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Advanced techniques for focused-ion-beam (FIB) device modification have been developed for complex, multistep modifications to circuitry on planar chip technology. Applying gas-assisted etching (GAE) techniques for high-aspect-ratio milling and the selective milling of both conductive and insulating films enhances process latitude. Localized ion-beam-induced deposition of an insulating film provides reconstructive capability in previously modified areas. The application of both techniques for complex device modification of VLSI devices fabricated with CMOS process technology is reviewed. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：1775 / 1778

页数：4